OEM DDR We mainly support DDR3, DDR4 for customers who also doing SSD business, to brand customers or computer factories, we also has LPDDR which now only support China Inland major mobile phone and IPAD customers and some smart watch customers. With its high performance and lower consumption, its good for small size smart devices. Dram/LPDDR Technical Parameter: PRODUCT CATEGORYSPECIFICATION / MAX DATA RATEDENSITYPACKAGEOPERATING TEMPERATURE DRAMDRAM D32Gb / 4GbFBGA 96 Ball25鈩儈85鈩?/p> DRAM D44Gb / 8GbFBGA 96 Ball DRAM ModuleU-DIMM4GB / 8GB / 16GB/32GB/0 鈩冿綖 85 鈩?/p> SO-DIMM R-DIMM8GB/16GB/32GB/0 鈩冿綖 85 鈩?/p> LPDDRLP DDR42GB / 3GB / 4GB / 6GB / 8GB200Ball0 鈩冿綖 70 鈩?/p> Specifications: Product Model No.SpecificationDensityDimensionPackage DRAM U-DIMM /SO-DIMM8GB X8/X16 1.2V*2666/2933/3200Mbps8GB7.5 x 13.3mm (W x L)78Ball/96Ball DRAM U-DIMM /SOD-IMM16GB X8/X16 1.2V*2666/2933/3200Mbps16GB10.3 x 11mm (W x L)78Ball/96Ball DRAM U-DIMM /SO-DIMM32GB X8/X16 1.2V*2666/2933/3200Mbps32GB10.3 x 11mm (W x L)78Ball/96Ball Available module: Part Number 1)DensityOrganizationComponent CompositionNumber of RankHeight 4GB UDIMM4GB512Mx64512Mx16 * 4131.25 mm 8GB UDIMM8GB1Gx641Gx8 * 8131.25 mm 16GB UDIMM16GB2Gx641Gx8 * 16231.25 mm 4GB SODIMM4GB512Mx64512Mx16 * 4130 mm 8GB SODIMM8GB1Gx641Gx8 * 8130 mm 16GB SODIMM16GB2Gx641Gx8 * 16230 mm NOTE: 1) (2133Mbps 15-15-15) / (2400Mbps 17-17-17) / (2666Mbps 19-19-19) / (3200Mbps 22-22-22) / (3200 Mbps 16-18-18) - DDR4-(3200Mbps 16-18-18) is backward compatible to lower frequency. KEY FEATURES SpeedDDR4-2133DDR4-2400DDR4-2666DDR4-3200DDR4-3200DDR4-3200Unit 15-15-1517-17-1719-19-1922-22-2219-19-1916-18-18 tCK(min)0.9380.8330.750.6250.6250.625ns CAS Latency151719221916nCK tRCD(min)14.0614.1614.2513.7511.87511.25ns tRP(min)14.0614.1614.2513.7511.87511.25ns tRAS(min)33323232.530.022.5ns tRC(min)47.0646.1646.2546.2541.87533.75ns 鈼廕EDEC standard 1.2V 卤 0.06V Power Supply 鈼廣DDQ = 1.2V 卤 0.06 V 鈼?067MHz fCK for 2133Mb/sec/pin,1200MHz fCK for 2400Mb/sec/pin 1333MHz fCK for 2666Mb/sec/pin,1600MHz fCK for 3200Mb/sec/pin 鈼?6 Banks (4 Bank G roups) 鈼廝rogrammable CAS Latency: 10 ,11,12,13,14,15,16,17,18,19,20,21, 22 鈼廝rogrammable Additive Latency (Posted CAS): 0, CL - 2, or CL - 1 clock 鈼廝rogrammable CAS Write Latency (CWL) = 11,14 (DDR4-2133), 12,16 (DDR4-2400) and 14,18 (DDR4- 2666) 鈥?Burst Length: 8, 4 with tCCD = 4 which does not allow seamless read or write [either On the fly using A12 or MRS] 鈼廈i-directional Differential Data Strobe 鈼廜n Die Termination using ODT pin 鈼廇verage Refresh Period 7.8us at lower then TCASE 85飩癈, 3.9us at 85飩癈 < TCASE 飩?95飩癈鈼廇synchronous Reset FUNCTION BLOCK DIAGRAM for: 4GB,512M x 64Module ( Populated as 1rank of x16DDR4 SDRAMs ) NOTE : 1)聽 Unless otherwise noted, resistor values are 150惟聽 5 %. 2)聽 ZQ resistors are 2400惟 1%. For all other resistor values refer to the appropriate wiring diagram. 8GB,1Gx64Module (Populated as 1rank of x 8DDR4 SDRAMs)OEM DDR website:http://www.viccotech.com/ddr/